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SiJ800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
T J = 25 °C
0.030
0.025
1
0.1
0.01
0.001
T J = 150 °C
T J = - 55 °C
0.020
0.015
0.010
0.005
T J = 25 °C
T J = 125 °C
0.0
0.2
0.4
0.6
0. 8
1.0
1.2
0
2
4
6
8
10
0.6
0.2
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
500
400
V GS - Gate-to-So u rce V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
300
- 0.2
- 0.6
I D = 1 mA
200
T A = 25 °C
100
I D = 250 μ A
- 1.0
0
- 50
- 25
0
25
50
75
100
125
150
0 . 0 0 1
0.01
0.1
1
1 0
T J - Temperat u re (°C)
Threshold Voltage
1000
100
Limited by R DS(on) *
Time (s)
Single Pulse Power, Junction-to-Ambient
10 μs
100 μ s
10
1 ms
1
10 ms
100 ms
1s
0.1
T A = 25 °C
Single P u lse
B V DSS
10 s
100 s, DC
Limited
0.01
0.1
1
10
100
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 64803
S09-0668-Rev. A, 20-Apr-09
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